Discover how replacing HfO₂ with La₂O₃ in MOSFETs is revolutionizing transistor technology, enabling more efficient and powerful electronics.
Explore the breakthrough technology of Sub-30 nm P-channel Schottky Source/Drain FinFETs and how they're revolutionizing semiconductor design and performance.
Explore how GaN surface conditions affect magnesium doping efficiency in semiconductor technology and LED development.
Discover how microscopic features on polishing pads enable the creation of flawless microchips through Chemical Mechanical Polishing and Computational Fluid Dynamics.
Explore Dr. Herbert Frank Schaake's groundbreaking work with HgCdTe and infrared detection technology that revolutionized how we see the invisible thermal universe.
Exploring how indium gallium arsenide (InGaAs) semiconductors are overcoming silicon's physical limits to power next-generation computing.
Exploring how praseodymium oxide interfaces with silicon and silicon carbide are enabling next-generation electronics
Exploring how lanthanum hafnium oxide (LHO) films deposited by electron cyclotron resonance-atomic layer deposition (ECR-ALD) are revolutionizing electronics at atomic scales.